ESD112-B1-02EL E6327

TVS Diodes Transient Voltage Suppressor Diodes ESD112-B1-02 Series Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD112-B1-02ELS ESD112-B1-02EL Data Sheet Rev. 1.3, 2013-11-27 Final Power Management & Multimarket ESD112-B1-02 Series Revision History: Rev.1.2, 2013-06-10 Page or Item Subjects (major changes since previous revision) Rev. 1.3, 2013-11-27: Final Data Sheet ESD112-B1-02EL Status change to final Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Final Data Sheet 2 Rev. 1.3, 2013-11-27 ESD112-B1-02 Series Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode 1 Bi-directional Ultra-low Capacitance ESD / Transient Protection Diode 1.1 Features • • • • • • • ESD / transient protection of RF signal lines according to: – IEC61000-4-2 (ESD): ±20 kV (air/contact) – IEC61000-4-4 (EFT): ±40 A (5/50 ns) – IEC61000-4-5 (surge): ±3 A (8/20 μs) Maximum working voltage: VRWM ±5.3 V Extremely low capacitance: CL = 0.2 pF (typical) Low clamping voltage: VCL = 29 V (typical) at IPP = 16 A Very low reverse current IR < 1 nA typ. Very small form factor down to 0.62 x 0.32 x 0.31 mm3 Pb-free (RoHS compliant) and halogen free package 1.2 • • Application Examples ESD protection of sensitive RF signal lines, Bluetooth Class 2, Automated Meter Reading RF antenna protection, frontend module, GPS, mobile TV, FM radio, UWB 1.3 Product Description Pin 1 Pin 2 Pin 1 marking (lasered) Pin 1 TSLP-2 Pin 1 Pin 2 Pin 2 TSSLP-2 a) Pin configuration b) Schematic diagram P G-TS (S)LP -2_Dual_Diode_S erie_P inConf_and_S c hematic Diag. v s d Figure 1-1 Pin Configuration and Schematic Diagram Table 1-1 Ordering Information Type Package Configuration Marking code ESD112-B1-02ELS TSSLP-2-4 1 line, bi-directional T ESD112-B1-02EL TSLP-2-20 1 line, bi-directional TE Final Data Sheet 3 Rev. 1.3, 2013-11-27 ESD112-B1-02 Series Characteristics 2 Characteristics Table 2-1 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit Min. Typ. Max. VESD -20 – 20 kV IPP -3 – 3 A Operating temperature range TOP -55 – 125 °C Storage temperature 1) VESD according to IEC61000-4-2 2) IPP according to IEC61000-4-5 Tstg -65 – 150 °C ESD air / contact discharge 1) Peak pulse current (tp = 8/20 μs) 2) Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.1 Electrical Characteristics at TA=25°C, unless otherwise specified    

 
   

            
  




  
 
    



 




               
      
       !     !   !      Figure 2-1 Definitions of electrical characteristics Final Data Sheet 4 Rev. 1.3, 2013-11-27 ESD112-B1-02 Series Characteristics Table 2-2 DC Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit Min. Typ. Max. Reverse working voltage VRWM –5.3 – 5.3 V Breakdown voltage 7 – – V VBR Note / Test Condition IR = 1 mA, from pin 1 to pin 2, from pin 2 to pin 1 Reverse current Table 2-3 IR